 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C IXFH 30N60Q VDSS IXFT 30N60Q ID25 RDS(on) = 600 V = 30 A = 0.23 trr 250 ns Maximum Ratings 600 600 20 30 30 120 30 45 1.5 10 500 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W C C C C TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S (TAB) G = Gate S = Source D = Drain TAB = Drain TO-247 TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 g g Features Low gate charge International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Avalanche energy and current rated Fast intrinsic Rectifier Advantages Easy to mount Space savings High power density Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 0.095 2.5 - 0.24 200 TJ = 25C TJ = 125C 25 1 0.23 4.5 V %/K V %/K nA A mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250A Temperature Coefficient VDS = VGS, ID = 4 mA Temperature Coefficient VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2003 IXYS All rights reserved DS99059(06/03) IXFH 30N60Q IXFT 30N60Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 14 22 4700 VGS = 0 V, VDS = 25 V, f = 1 MHz 580 230 30 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2.0 (External), 32 80 16 125 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 28 76 0.25 TO-247 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC 1 2 3 TO-247 AD (IXFH) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 26 104 1.5 250 A A V ns C A TO-268 Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS -di/dt = 100 A/s, VR = 100 V 1 10 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFH 30N60Q IXFT 30N60Q Fig. 1. Output Characteristics @ 25 Deg. C 27 24 21 VG S = 10V 9V 8V 7V 6V 70 60 50 40 30 20 5V 1 0 0 0 1 2 VG S = 10V 9V 8V 7V 6V Fig. 2. Extended Output Characteristics @ 25 deg. C I D - Amperes 1 5 1 2 9 6 3 0 5V V DS - Volts 3 4 5 6 7 8 I D - Amperes 1 8 0 4 8 1 2 1 6 20 24 V DS - Volts Fig. 3. Output Characteristics @ 125 Deg. C 27 24 21 VG S = 10V 9V 8V 7V 6V Fig. 4. RDS(on) Normalized to ID25 Value vs. Junction Temperature 2.8 2.5 VG S = 10V R D S (on) - Normalized 2.2 1 .9 1 .6 1 .3 1 0.7 0.4 I D = 30 A I D = 15A I D - Amperes 1 8 1 5 1 2 9 6 3 0 0 2 5V 4 6 8 1 0 1 2 1 4 1 6 -50 -25 0 25 50 75 1 00 1 25 1 50 V DS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D25 Value vs. I D 3.1 2.8 VG S = 10V 30 25 Fig. 6. Drain Current vs. Case Temperature R D S (on) - Normalized 2.5 2.2 1 .9 1 .6 1 .3 1 0.7 0 1 0 20 30 I D - Amperes T J = 125C 20 1 5 1 0 5 0 T J = 25C 40 50 60 70 -50 -25 0 25 50 75 1 00 1 25 1 50 I D - Amperes TC - Degrees Centigrade (c) 2003 IXYS All rights reserved IXFH 30N60Q IXFT 30N60Q Fig. 7. Input Admittance 60 50 60 50 T J = -40C 25C 125C Fig. 8. Transconductance I D - Amperes 40 30 20 1 0 0 3 3.5 4 4.5 5 5.5 6 6.5 7 T J = -40C 25C 125C G f s - Siemens 40 30 20 1 0 0 0 1 0 20 30 40 50 60 70 80 90 V GS - Volts I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 80 70 1 0 Fig. 10. Gate Charge I S - Amperes 60 50 40 30 20 1 0 0 0.2 0.4 0.6 0.8 1 1 .2 1 .4 T J = 125C T J = 25C 8 VD S = 300V I D = 15A I G = 10mA VG S - Volts 6 4 2 0 0 30 60 90 1 20 1 50 1 80 V SD - Volts Q G - nanoCoulombs Fig. 11. Capacitance 1 0000 f = 1M Hh 1 Fig. 12. Maxim um T ransient T herm al Resistance Capacitance - pF C iss 1 000 R (th) J C - (C/W) 35 40 C oss 0.1 C rss 1 00 0 5 1 0 1 5 0.01 V DS - Volts 20 25 30 1 Puls e Width - millis ec onds 10 100 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 |
Price & Availability of IXFT30N60Q
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |